Preparation and properties of sputtered nitrogen-doped cobalt silicide film

Jyh Hua Ting*, Shiuann Huah Shiau, Yeong Jyh Chen, Fu-Ming Pan, Harianto Wong, Gibson M. Pu, Chung Yuan Kung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


It is the purpose of this study to develop tough hinge material for the application of the torsional springs. Nitrogen-doped cobalt silicide (CoSi xNy) film is sputtered from cobalt silicide (CoSi 2) target in Ar/N2 discharge. Stress and sheet resistance of CoSixNy film are two major properties to be evaluated. Taguchi method is practiced in reactive sputtering deposition of CoSi xNy film. Process pressure is most critical to the CoSixNy film stress and the optimum condition of 1000 W, 0.8 Pa, and 20% N2 flow ratio, indeed results in low tensile CoSixNy film stress, about 54. MPa. Reannealing process indicates that stability of CoSixNy film is attained after first annealing process. Stress hysteresis behaviors of CoSix and CoSixNy films resemble that of metal film with a complete elastic manner in the second stage of heating and cooling. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses suggest that toughness and strength of the film is achievable. It is concluded that CoSi xNy film as a hinge material is feasible.

Original languageEnglish
Pages (from-to)155-160
Number of pages6
JournalThin Solid Films
Issue number1-2
StatePublished - 1 Dec 2004


  • Hinge
  • Reactive sputtering
  • Reannealing
  • Stress hysteresis
  • Taguchi method

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