Preparation and properties of perovskite thin films for resistive nonvolatile memory applications

Chun Hung Lai, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


Various perovskite structure electroceramic thin films have been studied for semiconductor memory applications. The high permittivity and ferroelectric remanent polarization properties of these materials give the promise of a new generation of advanced dynamic and/or nonvolatile memory devices. The recent study indicates that perovskite oxide showing bistable resistance switching behavior is a highly promising candidate for nonvolatile semiconductor device, the so-called resistance random access memory (RRAM). RRAMs exhibit sufficiently fast switching capability and low operation voltages as compared with flash memory, and bring about the current upsurge in research. This paper summarizes the fabrication and characterization of these potential materials, and provides a broad view of the current status and future trends for perovskite oxides-based RRAMs. The associated conduction mechanisms are also discussed with specific examples from recent literature.

Original languageEnglish
Pages (from-to)17-27
Number of pages11
Issue number1 PART 3
StatePublished - 1 Dec 2007
Event5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan
Duration: 3 Sep 20067 Sep 2006


  • Electrical property
  • PRAM
  • Perovskite thin film
  • Resistance switching

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