Preparation and characteristics of porous silica films by a modified base-catalyzed sol-gel process containing PVA: II. Film preparation

Y. Liu*, H. D. Chen, L. Zhang, X. Yao

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Porous SiO2 films were successfully deposited on silicon substrates by a modified base-catalyzed Sol-Gel process (MBCP) containing polyvinyl alcohol (PVA). The process conditions, such as the gelation time, the synthesis temperature, the stabilizing agent of the precursor solution and the spin coating speed, the heat-treatment, the annealing temperature of the film on the microstructure and porosity of porous SiO2 films were systematically investigated by SEM, XRD and ellipsometry techniques. This study provides a novel preparation technique for the porous SiO2 film. Using this process, the resultant film can reach a thickness of 3.6 μm for one layer, a porosity of 25-50%, a low thermal conductivity of 0.11 W/m·K. This film will be used as a low dielectric layer, an thermal-insulating layer and a low refractive index layer.

Original languageEnglish
Pages (from-to)103-111
Number of pages9
JournalJournal of Sol-Gel Science and Technology
Volume25
Issue number2
DOIs
StatePublished - 1 Sep 2002

Keywords

  • Porous film
  • SiO
  • Sol-gel
  • Thermal conductivity
  • Thickness

Fingerprint Dive into the research topics of 'Preparation and characteristics of porous silica films by a modified base-catalyzed sol-gel process containing PVA: II. Film preparation'. Together they form a unique fingerprint.

  • Cite this