Preferentially Oriented Ferroelectric Pb(Zr0.53Ti 0.47)O3 thin films on (110) BaRuO3/Ru/SiO 2/Si Substrates

Y. K. Wang*, Tseung-Yuen Tseng, Pang Lin

*Corresponding author for this work

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Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were deposited on BaRuO3 (BRO)/Ru/SiO2/Si substrates by a sol-gel method. The (HO)-oriented BaRuO3 bottom electrode films were deposited by rf sputtering at various temperatures. Highly (110) preferentially oriented PZT films were formed after annealing at over 450°C. The leakage current, dielectric constant, loss tangent, and polarization vs. electric field properties were strongly dependent on the annealing temperature of the PZT films and the deposition temperature of BRO electrodes. The dielectric constant and polarization decreased when the annealing temperature of the PZT film was over 700°C, which may be due to the interdiffusion between PZT and BRO.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number1
StatePublished - 9 Feb 2004

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