Precision alignment of mask etching with respect to crystal orientation

J. M. Lai*, Wei-Hua Chieng, Y. C. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

For most micro-mechanical devices, a high precision alignment of mask pattern to crystal orientation is preferred. Such alignment even becomes critical for devices that simultaneously require a smooth sidewall and minimal undercut. In this article, we present an innovative pre-etching pattern to determine the (110) crystal orientation on [100] silicon wafers. This pattern etched on the wafer allows us to determine the crystal orientation within an accuracy of 0.01 . Such a pre-etching pattern can be used as a valuable reference for all subsequent mask patterns.

Original languageEnglish
Pages (from-to)327-329
Number of pages3
JournalJournal of Micromechanics and Microengineering
Volume8
Issue number4
DOIs
StatePublished - 1 Dec 1998

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