Precise Ge quantum dot placement for quantum tunneling devices

Kuan Hung Chen*, Chung Yen Chien, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO2 or Si3N4 matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.

Original languageEnglish
Article number055302
JournalNanotechnology
Volume21
Issue number5
DOIs
StatePublished - 2 Feb 2010

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