Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

Q. Yang*, D. Scott, J. Miller, P. Meyer, Hao-Chung Kuo, J. E. Baker, G. E. Stillman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The impact of intermediate temperature annealing of the carbon-doped base of InGaP/GaAs heterojunction bipolar transistors (HBT) grown by metallorganic chemical vapor deposition (MOCVD) is investigated. The variation in the surface morphology of the base material was characterized by atomic force microscopy (AFM). Hall effect measurements and the dc characteristics of large area HBTs were used to study the annealing effects on the carrier concentration and the electrical properties, respectively. The carbon precipitates in the base start forming immediately after annealing begins, even for annealing at the growth temperature.

Original languageEnglish
Pages (from-to)2993-2995
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number20
DOIs
StatePublished - 17 May 1999

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