For the first time, millimeter-wave SiC (Silicon Carbide) IMPATT oscillator was analyzed at 500 K and 800 K with temperature dependent ionization rates and saturation velocity. The large signal simulations demonstrate the fact that SiC IMPATT devices have efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. The efficiencies (and d.c. power density) at 800 K for depletion widths of 0.25 pm (200 GHz), 0.5 μm (100 GHz) and 1 μm (50 GHz) are 12.4% (6.7 MW/cm2), 15% (4.5 MW/cm2) and 15.8% (3.3 MW/cm2), respectively, for p+n single-drift flat-profile structures.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA|
Duration: 8 Jun 1997 → 13 Jun 1997