Power generation of millimeter-wave SiC avalanche transit time oscillator at high temperature

Chin-Chun Meng*, G. Z. Liao

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

For the first time, millimeter-wave SiC (Silicon Carbide) IMPATT oscillator was analyzed at 500 K and 800 K with temperature dependent ionization rates and saturation velocity. The large signal simulations demonstrate the fact that SiC IMPATT devices have efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. The efficiencies (and d.c. power density) at 800 K for depletion widths of 0.25 pm (200 GHz), 0.5 μm (100 GHz) and 1 μm (50 GHz) are 12.4% (6.7 MW/cm2), 15% (4.5 MW/cm2) and 15.8% (3.3 MW/cm2), respectively, for p+n single-drift flat-profile structures.

Original languageEnglish
Pages (from-to)963-966
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
Duration: 8 Jun 199713 Jun 1997

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