We studied a novel method of increasing the efficiency of solar cells using BaSi2 as a semiconductor. BaSi2 could be deposited by RF magnetron sputtering using a polycrystalline BaSi2 target, followed by annealing at 500°C for 30 min in N2 ambient. Furthermore, Schottky-type solar cells using BaSi2 were fabricated. The crucial point is that Al-Nd was used to form the Schottky junction between the BaSi2 film and the Al-Nd electrode. Additionally, Si3N4 (3-5 nm) was used as an oxidation prevention layer. Under irradiation at 90 K, resulting in a short-circuit current density (Jsc) of 3.19 mA/cm2, an open-circuit voltage (Voc) of 0.76 V, and a fill factor (FF) of 0.28 were obtained.