Power conditioning applications of 700V GaN-HEMTs cascode switch

Stone Cheng*, Po Chien Chou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) cascoded with an integrated power MOSFET and a Schottky barrier diode. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 700 V. Analysis of 200 V/ 1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC Schottky barrier diode are also demonstrated. Finally, a flyback AC-DC converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

Original languageEnglish
Title of host publicationIECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4796-4801
Number of pages6
ISBN (Electronic)9781479917624
DOIs
StatePublished - 1 Jan 2015
Event41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 - Yokohama, Japan
Duration: 9 Nov 201512 Nov 2015

Publication series

NameIECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society

Conference

Conference41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015
CountryJapan
CityYokohama
Period9/11/1512/11/15

Keywords

  • Cascode structure
  • GaN-HEMT
  • Slant T-gate

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