Potential of enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for using in high-speed and low-power logic applications

Faiz Aizad Fatah, Yueh Chin Lin, Tsung Yun Lee, Kai Chun Yang, Ren Xuan Liu, Jing Ray Chan, Heng-Tung Hsu, Yasuyuki Miyamoto, Edward Yi Chang

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this study, a 60-nm enhancement-mode (E-mode) In0.65Ga0.35As/InAs/In0.65Ga0.35As high electron mobility transistor (HEMT) was developed, and its potential for use in high-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 × 104. The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications.

Original languageEnglish
Pages (from-to)N157-N159
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number12
DOIs
StatePublished - 1 Jan 2015

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