Post sulfurization effect on the MoS2 grown by pulsed laser deposition

Yen Teng Ho*, Tzu Chun Yen, Tien Tung Luong, Lin Lung Wei, Yung Yi Tu, Yung Ching Chu, Hung Ru Hsu, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Two inches size with high quality layered growth of MoS2 was achieved by PLD on c-plane sapphire substrate. 2∼3 monolayer MoS2 was obtained within 2 inches wafer estimated from Raman analysis and confirmed by cross-sectional view of TEM. Additionally, the oxide states of Mo 3d core level spectra of MoS2, analyzed by XPS, can be effectively reduced by adopting a post sulfurization process in H2S. The post process also improve the photoluminescence (PL) of MoS2 as well as the electrical characteristic of MoS2 FET due to elimination the Mo oxide in the grown film.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2016, CSTIC 2016
EditorsHanming Wu, Hsiang-Lan Lung, Ying Shi, Dong Chen, David Huang, Qi Wang, Kuochun Wu, Ying Zhang, Cor Claeys, Steve Liang, Ru Huang, Beichao Zhang, Peilin Song, Jiang Yan, Qinghuang Lin, Kafai Lai
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467388047
DOIs
StatePublished - 2 May 2016
EventChina Semiconductor Technology International Conference, CSTIC 2016 - Shanghai, China
Duration: 13 Mar 201614 Mar 2016

Publication series

NameChina Semiconductor Technology International Conference 2016, CSTIC 2016

Conference

ConferenceChina Semiconductor Technology International Conference, CSTIC 2016
CountryChina
CityShanghai
Period13/03/1614/03/16

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