Possibility of MMIC on Si: The lossy substrate issue

Albert Chin*, D. Prinslow, V. Tsai, G. Nasserbakht, B. Eklund

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

One difficult problem facing Si RF devices is substrate loss. Resistors, capacitors, inductors and sub-μm MOSFETs were fabricated and S-parameters for each were measured from 0.1 to 18 GHz. Good matching between measured and modeled S-parameters was obtained. Substrate effects were modeled by the RC shunt to ground from the equivalent circuit model. From matched models, it is found that the inductor is the only device severely degraded by the lossy substrate, and possible solutions including active inductors are examined.

Original languageEnglish
Pages148-152
Number of pages5
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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