One difficult problem facing Si RF devices is substrate loss. Resistors, capacitors, inductors and sub-μm MOSFETs were fabricated and S-parameters for each were measured from 0.1 to 18 GHz. Good matching between measured and modeled S-parameters was obtained. Substrate effects were modeled by the RC shunt to ground from the equivalent circuit model. From matched models, it is found that the inductor is the only device severely degraded by the lossy substrate, and possible solutions including active inductors are examined.
|Number of pages||5|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
Duration: 3 Jun 1997 → 5 Jun 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|Period||3/06/97 → 5/06/97|