Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ming Wen Ma, Wen Cheng Lo

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics. A roughly 50% reduction of VTH shift can be achieved for the 300-nm CESL HfO2 nMOSFET after 1000-s PBTI stressing without obvious HfO2/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO2 film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO2 film can be eliminated for CESL devices.

Original languageEnglish
Pages (from-to)1340-1343
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number12
DOIs
StatePublished - 8 Dec 2008

Keywords

  • Contact etch stop layer (CESL)
  • HfO
  • Positive bias temperature instability (PBTI)

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