Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot, Xuanwu Kang, Steve Stoffels, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

In this paper, positive bias temperature instability (PBTI) in fully recessed gate GaN MIS-FETs is studied by using an eMSM (extended Measure-Stress-Measure) technique, which consists of a set of stress/recovery tests. By using this technique, VTH shift after a stress and the relaxation information can be collected in one experiment. First of all, a typical forward-reverse gate sweep and frequency-dependent conductance method are used to characterize VTH shift and interface state density (Dit) in fully recessed gate MIS-FETs with two different gate dielectrics (PEALD SiN and ALD AhO3), showing that ALD AhO3 has a smaller VTH shift compared with PEALD SiN although the latter has a smaller Dit. Then, an eMSM technique is used to understand the trapping/de-trapping phenomena under stress and relaxation period. The results show a power law dependency of VTH shift with respect to the stress time. Furthermore, the voltage dependency of Vth shift (7) can be extracted, showing that ALD Al2O3 has a higher 7 compared to PEALD SiN. The physical model is proposed to explain the mechanism for the different voltage dependency. On the other hand, the relaxation data is collected as well, indicating that Al2O3 has a faster relaxation even under a high voltage overdrive stress, which is consistent with physical model since accessibility of defects in Al2O3 are located at energies less favorable for channel carriers, compared to SiN.

Original languageEnglish
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4A21-4A26
ISBN (Electronic)9781467391368
DOIs
StatePublished - 22 Sep 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 17 Apr 201621 Apr 2016

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Conference

Conference2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period17/04/1621/04/16

Keywords

  • GaN
  • MIS-FET
  • Positive Bias Temperature Instability

Fingerprint Dive into the research topics of 'Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs'. Together they form a unique fingerprint.

Cite this