Positive bias stress instability of In-Ga-Zn-O thin-film transistors with Al2O3/TEOS oxide gate dielectrics

Yih Shing Lee, Yu Hsin Wang, Tsung Cheng Tien, Tsung-Eong Hsien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The Vth shift (δVth) of a-IGZO devices with gate dielectrics of Al2O3 and TEOS oxide after at a gate bias of + 20V for 3600 s are +3.66V and -2.18V, respectively. Moreover, the Vth shift of two stacked dielectrics Al2O3 /TEOS oxide by using the equivalent capacitance with 100-nm-Thick TEOS oxide. Two stacked dielectrics with a 10-nm-Thick Al2O3 and a 96-nm-Thick TEOS oxide, δVth decreases to -0.42V after a gate bias of +20 V for 6400 s.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages205-206
Number of pages2
ISBN (Electronic)9784990875336
StatePublished - 8 Aug 2017
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 4 Jul 20177 Jul 2017

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
CountryJapan
CityKyoto
Period4/07/177/07/17

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