Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

Shun Chieh Hsu, Yin Han Chen, Hsuan An Chen, Shih Yen Lin, Tien Lin Shen, Hao-Chung Kuo, Cheng Lun Shih, Jinn Kong Sheu, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15

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    Hsu, S. C., Chen, Y. H., Chen, H. A., Lin, S. Y., Shen, T. L., Kuo, H-C., Shih, C. L., Sheu, J. K., & Lin, C-C. (2015). Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355811] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355811