Positioning and numbering Ge quantum dots for effective quantum tunneling devices

K. H. Chen, C. Y. Chien, W. T. Lai, S. W. Lee, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The authors have demonstrated a simple method to precisely control the number and the position of nanometerscaled Ge quantum dots (QDs) embedded in SiO2 or Si3N4 tunnel barriers via thermally oxidizing pre-patterned nanostructures. A single Ge QD in the core or twin Ge QDs near the edges of the nanotrench could be realized by modulating the initial nanostructure's dimensions and the spacer's materials. This method offers great promise to realize effective single electron transistors and coupled QD devices for single charge manipulations.

Original languageEnglish
Title of host publication2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages536-539
Number of pages4
StatePublished - 1 Dec 2009
Event2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy
Duration: 26 Jul 200930 Jul 2009

Publication series

Name2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Conference

Conference2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
CountryItaly
CityGenoa
Period26/07/0930/07/09

Keywords

  • Component: quantum dots
  • Germanium
  • Single-electron devices

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