Porous materials with ultralow optical constants for integrated optical device applications

Hsuen Li Chen*, Chung I. Hsieh, Chao Chia Cheng, Chia Pin Chang, Wen Hau Hsu, Way Seen Wang, Po-Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Ultralow dielectric constant (<2.0) porous materials have received much attention as next-generation dielectric materials. In this study, optical properties of porous-methyl-silsesquioxane(MSQ)-like films (porous polysilazane, PPSZ) were characterized for optical waveguide devices applications. Measured results indicate that the refractive index is decreased to approximately 1.320 as the hydration time exceeds 24 h. The measured refractive index is about 1.163 at a wavelength of 1550nm. PPSZ films have low absorption in the 500 to 2000 nm wavelength regime. Because of their relatively low refractive index and low absorption over a large spectral regime, PPSZ films can be good cladding materials for use in optically integrated devices with many high-refractive- index materials such as silicon oxide, silicon nitride, silicon, and polymers. We demonstrate two structures, ridge waveguides and large-angle Y-branch power splitters, composed of PPSZ and SU8 films to illustrate the use of low dielectric constant (K) cladding materials. The simulation results indicate that the PPSZ films provide better confinement of light. Experimentally, a large-angle Y-branch power splitter with PPSZ cladding can be used to guide waves with the large branching angle of 33.58°.

Original languageEnglish
Pages (from-to)5673-5676
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 B
DOIs
StatePublished - 26 Jul 2005

Keywords

  • Low dielectric constant materials
  • Porous films
  • Porous polysilazane (PPSZ)
  • Ridge waveguides

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