Porous Cu3Sn Formation in Cu-Sn IMC-Based Micro-Joints

Yaodong Wang, David T. Chu, King-Ning Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Microbumps are widely used to interconnect stacked chips with through-Si-vias (TSVs) in vertical direction to enable 3D IC integration. Several recent studies reported [1, 2] that a unique porous void formation was found in Cu-Sn microbump particularly in Cu3Sn layer. This porous Cu3Sn formation was only reported in microbump which has constrained joint thickness (

Original languageEnglish
Title of host publicationProceedings - ECTC 2016
Subtitle of host publication66th Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages439-446
Number of pages8
ISBN (Electronic)9781509012039
DOIs
StatePublished - 16 Aug 2016
Event66th IEEE Electronic Components and Technology Conference, ECTC 2016 - Las Vegas, United States
Duration: 31 May 20163 Jun 2016

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2016-August
ISSN (Print)0569-5503

Conference

Conference66th IEEE Electronic Components and Technology Conference, ECTC 2016
CountryUnited States
CityLas Vegas
Period31/05/163/06/16

Keywords

  • 3D IC
  • 3D synchrotron X-ray tomography
  • Kirkendall void
  • Mechancial properties
  • Microbumps
  • Porous Cu3Sn

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    Wang, Y., Chu, D. T., & Tu, K-N. (2016). Porous Cu3Sn Formation in Cu-Sn IMC-Based Micro-Joints. In Proceedings - ECTC 2016: 66th Electronic Components and Technology Conference (pp. 439-446). [7545469] (Proceedings - Electronic Components and Technology Conference; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2016.359