Pore sealing of mesoporous silica low-k dielectrics by oxygen and argon plasma treatments

Chih Chieh Chang, Fu-Ming Pan*, Ching Wen Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this study, we have prepared surfactant templated mesoporous silica thin films as the ultralow-k dielectrics and a TaN X thin film deposited by plasma enhanced atomic layer chemical vapor deposition (PE-ALCVD) using TaCl 5 as the gas precursor was used as the diffusion barrier. Without any surface modification for the dielectric layer, Ta atoms could easily diffuse into the mesoporous layer seriously degrading dielectric properties. O 2 and Ar plasmas have been used to modify the surface of the mesoporous dielectric in a high density plasma chemical vapor deposition (HDP-CVD) system, and both of the treatments produced a densified oxide layer a few nanometer thick. According to transmission electron microscopy and Auger electron spectroscopy, the pore sealing treatment could effectively prevent Ta atoms from diffusing into the mesoporous dielectric during the PE-ALCVD process.

Original languageEnglish
Pages (from-to)2241-2246
Number of pages6
JournalMicroelectronic Engineering
Volume86
Issue number11
DOIs
StatePublished - 1 Nov 2009

Keywords

  • Low-k dielectric
  • Plasma treatment
  • Pore sealing

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