Polysilicon nanowire sensor devices based on high-k dielectric membrane for pH sensing and DNA detection

Chun Yu Wu*, Po Yen Hsu, Chao Lung Wang, Ta Chuan Liao, Huang-Chung Cheng, You Lin Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The pH sensing characteristics of poly-Si nanowires with high-k sensing membranes are investigated. As a result, the sensing membrane of HfO 2 exhibits higher sensitivity and better reproducibility test as compared with TEOS SiO 2 , Al 2 O 3 , TiO 2 films. The sensor device with HfO 2 dielectric membrane reveals a great pH sensitivity of 172.8 nA/pH. In additon, the label-free DNA detection ability of the poly-Si nanowires is also demonstrated. The 10-base-long single-strained homopolymers DNA molecule solution with an ultra-low concentration of 0.01 nM can be detected by using HfO 2 sensing film. Such a poly-Si nanowires structure with HfO 2 sensing membrane is very suitable for future biochemical sensors applications.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages537-542
Number of pages6
Edition3
DOIs
StatePublished - 19 Nov 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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