Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology

Kow-Ming Chang; Chih Hsiang Lin; Shih Syuan Huang

doi:10.1149/1.2930792

Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology

Kow-Ming Chang^*, Chih Hsiang Lin, Shih Syuan Huang

^*Corresponding author for this work

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO ₂ gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmospheric-pressure plasma (APP) approach to treat SiO₂ surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<1007:) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO₂ surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm²/Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO₂ surface by spin-coating or evaporation.

Original language	English
Title of host publication	ECS Transactions - Organic Semiconductor Materials and Devices
Pages	43-49
Number of pages	7
Edition	25
DOIs	https://doi.org/10.1149/1.2930792
State	Published - 24 Dec 2008
Event	Organic Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States Duration: 7 Oct 2007 → 12 Oct 2007

Publication series

Name	ECS Transactions
Number	25
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Organic Semiconductor Materials and Devices - 212th ECS Meeting
Country	United States
City	Washington, DC
Period	7/10/07 → 12/10/07

Access to Document

10.1149/1.2930792

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@inproceedings{b79a9a00fd484f509042a681537e9693,

title = "Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology",

abstract = "Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO 2 gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmospheric-pressure plasma (APP) approach to treat SiO2 surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<1007:) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO2 surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm2/Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO2 surface by spin-coating or evaporation.",

author = "Kow-Ming Chang and Lin, {Chih Hsiang} and Huang, {Shih Syuan}",

year = "2008",

month = dec,

day = "24",

doi = "10.1149/1.2930792",

language = "English",

isbn = "9781605601977",

series = "ECS Transactions",

number = "25",

pages = "43--49",

booktitle = "ECS Transactions - Organic Semiconductor Materials and Devices",

edition = "25",

note = "null ; Conference date: 07-10-2007 Through 12-10-2007",

}

Chang, K-M, Lin, CH & Huang, SS 2008, Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology. in ECS Transactions - Organic Semiconductor Materials and Devices. 25 edn, ECS Transactions, no. 25, vol. 11, pp. 43-49, Organic Semiconductor Materials and Devices - 212th ECS Meeting, Washington, DC, United States, 7/10/07. https://doi.org/10.1149/1.2930792

Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology. / Chang, Kow-Ming; Lin, Chih Hsiang; Huang, Shih Syuan.

ECS Transactions - Organic Semiconductor Materials and Devices. 25. ed. 2008. p. 43-49 (ECS Transactions; Vol. 11, No. 25).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology

AU - Chang, Kow-Ming

AU - Lin, Chih Hsiang

AU - Huang, Shih Syuan

PY - 2008/12/24

Y1 - 2008/12/24

N2 - Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO 2 gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmospheric-pressure plasma (APP) approach to treat SiO2 surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<1007:) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO2 surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm2/Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO2 surface by spin-coating or evaporation.

AB - Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO 2 gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmospheric-pressure plasma (APP) approach to treat SiO2 surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<1007:) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO2 surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm2/Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO2 surface by spin-coating or evaporation.

UR - http://www.scopus.com/inward/record.url?scp=57749173638&partnerID=8YFLogxK

U2 - 10.1149/1.2930792

DO - 10.1149/1.2930792

M3 - Conference contribution

AN - SCOPUS:57749173638

SN - 9781605601977

T3 - ECS Transactions

SP - 43

EP - 49

BT - ECS Transactions - Organic Semiconductor Materials and Devices

Y2 - 7 October 2007 through 12 October 2007

ER -