Polymer thin-film transistors with chemically modified dielectric interfaces by atmospheric-pressure plasma technology

Kow-Ming Chang*, Chih Hsiang Lin, Shih Syuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO 2 gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmospheric-pressure plasma (APP) approach to treat SiO2 surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<1007:) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO2 surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm2/Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO2 surface by spin-coating or evaporation.

Original languageEnglish
Title of host publicationECS Transactions - Organic Semiconductor Materials and Devices
Pages43-49
Number of pages7
Edition25
DOIs
StatePublished - 24 Dec 2008
EventOrganic Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number25
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceOrganic Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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