Polycrystalline silicon/metal stacked gate for threshold voltage control in metal-oxide-semiconductor field-effect transistors

Igor Polishchuk*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A stack structure for the gate electrode of metal-oxide-semiconductor (MOS) transistors is proposed, analyzed, and simulated. The stack consists of a very thin polycrystalline silicon (polysilicon) layer and metal. By changing the thickness of the polysilicon layer, one can change the effective work function of the gate. Thus, the stacked-gate structure allows for a method to continuously adjust MOS field-effect transistor threshold voltage through gate work-function engineering while retaining the proven SiO 2 /polysilicon interface.

Original languageEnglish
Pages (from-to)1938-1940
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number14
DOIs
StatePublished - 3 Apr 2000

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