Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

Chun Chien Tsai*, Yao Jen Lee, Ko Yu Chiang, Jyh Liang Wang, I. Che Lee, Hsu Hsin Chen, Kai Fang Wei, Ting Kuo Chang, Bo Ting Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm -sized disklike silicon grains is formed, and the n -channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308 cm2 V s as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Original languageEnglish
Article number201903
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
StatePublished - 23 Nov 2007

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