Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

Shih Chieh Wu, Tuo-Hung Hou*, Shiow Huey Chuang, Hsin Chih Chou, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This study demonstrates polycrystalline silicon thin-film transistors (poly-Si TFTs) integrated with a high-κ nickel-titanium oxide (NiTiO 3) gate dielectric using sol-gel spin-coating and nitrogen channel implantation. This novel fabrication method of the high-κ NiTiO 3 gate dielectric offers thin equivalent-oxide thickness and high gate capacitance density, favorable for increasing the current driving capability. Introducing nitrogen ions into the poly-Si using implantation effectively passivates the trap states not only in the poly-Si channel but also at the gate dielectric/poly-Si interface. The poly-Si NiTiO 3 TFTs with nitrogen implantation exhibit significantly improved electrical characteristics, including lower threshold voltage, a steeper subthreshold swing, higher field-effect mobility, a larger on/off current ratio, and less threshold-voltage roll-off. Furthermore, the nitrogen implantation improves the reliability of poly-Si NiTiO 3 TFTs against hot-carrier stress and positive bias temperature instability. front matter

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalSolid-State Electronics
Volume78
DOIs
StatePublished - 1 Dec 2012

Keywords

  • High-κ gate dielectric
  • Nickel-titanium oxide (NiTiO3)
  • Nitrogen implantation
  • Thin-film transistors (TFTs)

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