Polycrystalline Cu(In, Ga)Se2 thin films and PV devices sputtered from a binary target without additional selenization

B. T. Jheng, Po-Tsun Liu, Y. P. Chang, M. C. Wu

Research output: Contribution to journalArticle

Abstract

This work presents a novel method to form polycrystalline CuIn 1-xGaxSe2 (CIGS) thin film by co-sputtering of In-Se and Cu- Ga alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using material analysis methods. Experimental results indicate that CIGS thin films featured densely packed grains and chalcopyrite phase peaks of (112), (220), (204), (312), and (116). Raman spectroscopy analysis revealed chalcopyrite CIGS phase with Raman shift at 175cm-1, while no signal at 258cm-1 indicated the exclusion of Cu2-xSe phase. Devices built with these films exhibit efficiencies as high as 8.6%.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalECS Transactions
Volume50
Issue number49
DOIs
StatePublished - 1 Dec 2012

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