Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

Y. L. Chou, Ta-Hui Wang*, Mercator Lin, Y. W. Chang, Lenvis Liu, S. W. Huang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.

Original languageEnglish
Article number7501605
Pages (from-to)998-1001
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number8
DOIs
StatePublished - 1 Aug 2016

Keywords

  • RTN
  • Vertical NAND
  • pass voltage
  • trap position

Fingerprint Dive into the research topics of 'Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string'. Together they form a unique fingerprint.

Cite this