Poly-Si thin-film transistors crystallized by electron-beam annealing

C. Y. Lin*, K. H. Shih, C. C. Wu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We have investigated an alternative electron-beam crystallization method for poly-Si thin-film transistor application. In contrast to the high crystallization temperature and long duration of conventional furnace crystallization, electron-beam crystallization could be performed at a low thermal budget even without substrate heating. It also provides better device characteristics than conventional furnace annealing, including smaller threshold voltage, higher mobility, smaller subthreshold swing, and larger ION/IOFF ratio. The much smoother surface than the excimer laser annealed sample is also important for further gate oxide integrity and device performance improvement.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number7
DOIs
StatePublished - 1 Jul 2002

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