Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

Po Yi Kuo*, Tien-Sheng Chao, Jyun Siang Huang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 °C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.

Original languageEnglish
Pages (from-to)234-236
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number3
DOIs
StatePublished - 12 Feb 2009

Keywords

  • Charge retention
  • Endurance
  • Ge nanocrystals (Ge-NCs)
  • Nonvolatile memory
  • Polycrystalline silicon thin-film transistors (poly-Si TFTs)
  • Programming/erasing

Fingerprint Dive into the research topics of 'Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition'. Together they form a unique fingerprint.

Cite this