Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer

Chung-Lung Chen, Yung Chun Wu, Tien Chun Lin, Jyun-Yang Huang, Min-Feng Hung, Jiang-Hung Chen, Chun-Yen Chang

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10(4) s at 85 degrees C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications.
Original languageEnglish
Pages (from-to)1407-1409
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 2010

Keywords

  • Indium gallium zinc oxide (IGZO); nanocrystal (NC); nonvolatile memory (NVM); thin-film transistor (TFT)

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