This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10(4) s at 85 degrees C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications.
- Indium gallium zinc oxide (IGZO); nanocrystal (NC); nonvolatile memory (NVM); thin-film transistor (TFT)
Chen, C-L., Wu, Y. C., Lin, T. C., Huang, J-Y., Hung, M-F., Chen, J-H., & Chang, C-Y. (2010). Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer. IEEE Electron Device Letters, 31(12), 1407-1409. https://doi.org/10.1109/LED.2010.2076271