Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

C. J. Lin*, Y. S. Huang, N. Y. Li, Pei-Wen Li, K. K. Tiong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR)_spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [110]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz-Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region.

Original languageEnglish
Pages (from-to)4565-4569
Number of pages5
JournalJournal of Applied Physics
Volume90
Issue number9
DOIs
StatePublished - 1 Nov 2001

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