Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

T. M. Hsu*, C. Y. Lai, Wen-Hao Chang, C. C. Pan, C. C. Chuo, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The polarization field of barrier-doped In0.06Ga 0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.

Original languageEnglish
Pages (from-to)545-547
Number of pages3
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
StatePublished - 31 May 2004
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 31 May 20044 Jun 2004

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