Polarization engineering in GaN power devices

Tetsuzo Ueda*, Satoshi Nakazawa, Tomohiro Murata, Hidetoshi Ishida, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

1 Scopus citations


This paper reviews novel design of epitaxial structure for GaN-based power devices taking advantages of the material's unique polarization. This can be called as polarization engineering which enables low on-state resistances and high breakdown voltages. Al-GaN/GaN superlattice and polarization-matched InAlGaN quaternary alloy capping layers effectively reduce the series resistance of AlGaN/GaN heterojunction field effect transistors (HFETs) by reducing the potential barriers above the heterojunction. Natural super junction (NSJ) model is proposed, which well explains the limitless increase of the breakdown voltages of GaN transistor by the extension of the gate-drain spacing. This model is applied to diodes with multi channels of AlGaN/GaN resulting in low on-state resistances and high breakdown voltages. The presented polarization engineering is very promising for future GaN power devices with the improved performances.

Original languageEnglish
Pages (from-to)393-397
Number of pages5
JournalJournal of the Vacuum Society of Japan
Issue number6
StatePublished - 1 Dec 2011

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