(Pb,Sr)TiO3 (PST) films were deposited on Pt/SiO2/Si by pulsed laser deposition at low substrate temperatures (Ts) ranging from 300 to 450°C. The loss in remnant polarization (Pr) and coercive field (Ec) is found to be less than 17% after 10 10 switching cycles when Ts is higher than 350°C. It is also suggested that the leakage current is reduced when Ts increases up to a temperature of 400°C. However, PST films deposited at 450°C may produce serious Pb-O volatilization, resulting in the deterioration of the crystallinity and high leakage currents. As a result, the 400°C-deposited PST film reveals the lowest leakage current, nearly fatigued-free J-E characteristics after 1010 switching cycles, and the best breakdown property, attributed to the enhanced crystallinity and low concentration of defects.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 10 Jan 2007|
- Deposition temperature (substrate temperature)
- Lead strontium titanate
- Pulsed-laser deposition