Polarization control of InAs quantum dot semiconductor laser using external light injection technique

P. C. Peng, R. L. Lan, S. T. Hsu, H. H. Lu, Kuo-Jui Lin, Hao-Chung Kuo, G. R. Lin, J. Y. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates experimentally the polarization control of InAs-InGaAs quantum dot (QD) semiconductor laser. The polarization characteristic of QD laser at different bias current is studied. The results of this study will be useful in the field of optical signal processing.

Original languageEnglish
Title of host publication2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Pages167-168
Number of pages2
DOIs
StatePublished - 1 Dec 2010
Event2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 - Sapporo, Japan
Duration: 9 Aug 201012 Aug 2010

Publication series

Name2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010

Conference

Conference2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
CountryJapan
CitySapporo
Period9/08/1012/08/10

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    Peng, P. C., Lan, R. L., Hsu, S. T., Lu, H. H., Lin, K-J., Kuo, H-C., Lin, G. R., & Chi, J. Y. (2010). Polarization control of InAs quantum dot semiconductor laser using external light injection technique. In 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 (pp. 167-168). [5672130] (2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010). https://doi.org/10.1109/OMEMS.2010.5672130