Polarity effect of electromigration in Ni2Si contacts on Si

J. S. Huang, H. K. Liou, King-Ning Tu

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The electromigration of contacts in shallow junction devices is a reliability issue for the future very large scale integration technology. The stability of silicide contacts against a high current density is unknown. We have observed a strong polarity effect of the electromigration-induced failure at both Ni/Ni2Si/n+-Si and Ni/Ni2Si/p+-Si contact pairs. They were found to fail preferentially at the cathode. The unreacted Ni/n+-Si and Ni/p+-Si contact pairs have also been studied. The latter fails at the cathode while the former fails at the anode. Failure mechanisms are proposed to explain the polarity effects.

Original languageEnglish
Pages (from-to)2346-2349
Number of pages4
JournalPhysical Review Letters
Volume76
Issue number13
DOIs
StatePublished - 1 Jan 1996

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