Plasmonic green nanolaser based on a metal-oxide-semiconductor structure

Chen Ying Wu, Cheng Tai Kuo, Chun Yuan Wang, Chieh Lun He, Meng Hsien Lin, Hyeyoung Ahn*, Shangjr Gwo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

95 Scopus citations

Abstract

Realization of smaller and faster coherent light sources is critically important for the emerging applications in nanophotonics and information technology. Semiconductor lasers are arguably the most suitable candidate for such purposes. However, the minimum size of conventional semiconductor lasers utilizing dielectric optical cavities for sustaining laser oscillation is ultimately governed by the diffraction limit (∼(λ/2n)3 for three-dimensional (3D) cavities, where λ is the free-space wavelength and n is the refractive index). Here, we demonstrate the 3D subdiffraction- limited laser operation in the green spectral region based on a metal-oxide-semiconductor (MOS) structure, comprising a bundle of green-emitting InGaN/GaN nanorods strongly coupled to a gold plate through a SiO2 dielectric nanogap layer. In this plasmonic nanocavity structure, the analogue of MOS-type "nanocapacitor" in nanoelectronics leads to the confinement of the plasmonic field into a 3D mode volume of 8.0×10 -4 μ3 (∼0.14(λ/2n)3).

Original languageEnglish
Pages (from-to)4256-4260
Number of pages5
JournalNano Letters
Volume11
Issue number10
DOIs
StatePublished - 12 Oct 2011

Keywords

  • indium gallium nitride
  • nanoro
  • Plasmonic nanolaser
  • surface plasmon polariton

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