Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

C. C. Chen*, Horng-Chih Lin, C. Y. Chang, Tien-Sheng Chao, S. C. Huang, W. F. Wu, T. Y. Huang, M. S. Liang

*Corresponding author for this work

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N2O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N2 plasma post-treatment is found to be effective in suppressing the gate leakage current.

Original languageEnglish
Pages117-120
Number of pages4
DOIs
StatePublished - 1 Dec 2000
Event5th International Symposium on Plasma Process-Induced Damage - Santa Clara, CA, USA
Duration: 23 May 200024 May 2000

Conference

Conference5th International Symposium on Plasma Process-Induced Damage
CitySanta Clara, CA, USA
Period23/05/0024/05/00

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