Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma

Fang Shing Wang*, Chun Yao Huang, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A novel defect passivation process in polycrystalline silicon (poly-Si) thin-film transistors (TFTs) utilizing nitrous oxide (N2O) plasma has been performed to significantly improve the electrical characteristics of poly-Si TFTs. For example, the on/off current ratio increased to 6.58 × 106; the threshold voltage decreased to 0.55 V, and the field effect mobility increased to 48.2 cm2/Vs. The distribution of N incorporated in this oxide and these poly-Si films was examined by means of secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). It is believed that the nitrogen radicals which dissociated from the N2O gas as well as the hydrogen radicals which dissociated from the residual H2O can both diffuse into the active poly-Si layer to passivate the grain-boundary defect states and accumulate at the gate SiO2/poly-Si interface to reduce the interface state density. Thus, the hot-carrier reliability of TFTs was also enhanced after the N2O plasma treatments.

Original languageEnglish
Pages (from-to)2028-2031
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number4 A
DOIs
StatePublished - 1 Apr 1997

Keywords

  • Defect passivation
  • Hot-carrier reliability
  • NO plasma
  • Polycrystalline silicon
  • Thin-film transistor

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