Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma

Fang Shing Wang; Chun Yao Huang; Huang-Chung Cheng

doi:10.1143/JJAP.36.2028

Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma

Fang Shing Wang^*, Chun Yao Huang, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A novel defect passivation process in polycrystalline silicon (poly-Si) thin-film transistors (TFTs) utilizing nitrous oxide (N₂O) plasma has been performed to significantly improve the electrical characteristics of poly-Si TFTs. For example, the on/off current ratio increased to 6.58 × 10⁶; the threshold voltage decreased to 0.55 V, and the field effect mobility increased to 48.2 cm²/Vs. The distribution of N incorporated in this oxide and these poly-Si films was examined by means of secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). It is believed that the nitrogen radicals which dissociated from the N₂O gas as well as the hydrogen radicals which dissociated from the residual H₂O can both diffuse into the active poly-Si layer to passivate the grain-boundary defect states and accumulate at the gate SiO₂/poly-Si interface to reduce the interface state density. Thus, the hot-carrier reliability of TFTs was also enhanced after the N₂O plasma treatments.

Original language	English
Pages (from-to)	2028-2031
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.36.2028
State	Published - 1 Apr 1997

Keywords

Defect passivation
Hot-carrier reliability
NO plasma
Polycrystalline silicon
Thin-film transistor

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title = "Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma",

abstract = "A novel defect passivation process in polycrystalline silicon (poly-Si) thin-film transistors (TFTs) utilizing nitrous oxide (N2O) plasma has been performed to significantly improve the electrical characteristics of poly-Si TFTs. For example, the on/off current ratio increased to 6.58 × 106; the threshold voltage decreased to 0.55 V, and the field effect mobility increased to 48.2 cm2/Vs. The distribution of N incorporated in this oxide and these poly-Si films was examined by means of secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). It is believed that the nitrogen radicals which dissociated from the N2O gas as well as the hydrogen radicals which dissociated from the residual H2O can both diffuse into the active poly-Si layer to passivate the grain-boundary defect states and accumulate at the gate SiO2/poly-Si interface to reduce the interface state density. Thus, the hot-carrier reliability of TFTs was also enhanced after the N2O plasma treatments.",

keywords = "Defect passivation, Hot-carrier reliability, NO plasma, Polycrystalline silicon, Thin-film transistor",

author = "Wang, {Fang Shing} and Huang, {Chun Yao} and Huang-Chung Cheng",

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doi = "10.1143/JJAP.36.2028",

language = "English",

volume = "36",

pages = "2028--2031",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma. / Wang, Fang Shing; Huang, Chun Yao; Cheng, Huang-Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 4 A, 01.04.1997, p. 2028-2031.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma

AU - Wang, Fang Shing

AU - Huang, Chun Yao

AU - Cheng, Huang-Chung

PY - 1997/4/1

Y1 - 1997/4/1

N2 - A novel defect passivation process in polycrystalline silicon (poly-Si) thin-film transistors (TFTs) utilizing nitrous oxide (N2O) plasma has been performed to significantly improve the electrical characteristics of poly-Si TFTs. For example, the on/off current ratio increased to 6.58 × 106; the threshold voltage decreased to 0.55 V, and the field effect mobility increased to 48.2 cm2/Vs. The distribution of N incorporated in this oxide and these poly-Si films was examined by means of secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). It is believed that the nitrogen radicals which dissociated from the N2O gas as well as the hydrogen radicals which dissociated from the residual H2O can both diffuse into the active poly-Si layer to passivate the grain-boundary defect states and accumulate at the gate SiO2/poly-Si interface to reduce the interface state density. Thus, the hot-carrier reliability of TFTs was also enhanced after the N2O plasma treatments.

AB - A novel defect passivation process in polycrystalline silicon (poly-Si) thin-film transistors (TFTs) utilizing nitrous oxide (N2O) plasma has been performed to significantly improve the electrical characteristics of poly-Si TFTs. For example, the on/off current ratio increased to 6.58 × 106; the threshold voltage decreased to 0.55 V, and the field effect mobility increased to 48.2 cm2/Vs. The distribution of N incorporated in this oxide and these poly-Si films was examined by means of secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). It is believed that the nitrogen radicals which dissociated from the N2O gas as well as the hydrogen radicals which dissociated from the residual H2O can both diffuse into the active poly-Si layer to passivate the grain-boundary defect states and accumulate at the gate SiO2/poly-Si interface to reduce the interface state density. Thus, the hot-carrier reliability of TFTs was also enhanced after the N2O plasma treatments.

KW - Defect passivation

KW - Hot-carrier reliability

KW - NO plasma

KW - Polycrystalline silicon

KW - Thin-film transistor

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

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ER -

Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma

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