Plasma-etching induced damage in thin oxide

Hyungcheol Shin, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Plasma AI etching and resist ashing processes cause Fowler-Nordheim current to flow through the oxide and plasma-induced damage can be simulated and modeled as damage produced by constant current electrical stress. These current produced by plasma process increases with the "antenna" size of the device structure. CV measurement is a more sensitive technique for characterizing plasma-etching induced damage than oxide breakdown. The stress current is collected only through the aluminum surfaces not covered by the photoresist during plasma processes. The plasma stress current is proportional to AI pad peripheral length during AI etching and AI pad area during photoresist stripping. A model of oxide damage due to plasma etching is proposed.

Original languageEnglish
Title of host publication3rd Annual Advanced Semiconductor Manufacturing Conference and Workshop 1992, ASMC 1992 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-83
Number of pages5
ISBN (Electronic)0780307402, 9780780307407
DOIs
StatePublished - 30 Sep 1992
Event3rd Annual Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 1992 - Cambridge, United States
Duration: 30 Sep 19921 Oct 1992

Publication series

Name3rd Annual Advanced Semiconductor Manufacturing Conference and Workshop 1992, ASMC 1992 - Proceedings

Conference

Conference3rd Annual Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 1992
CountryUnited States
CityCambridge
Period30/09/921/10/92

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