Plasma Doping (PD) for ultra-shallow junction

B. Mizuno*, K. Okashita, K. Nakamoto, C. G. Jin, Y. Sasaki, K. Tsutsui, H. A. Sauddin, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages20-24
Number of pages5
DOIs
StatePublished - 2008
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 15 May 200816 May 2008

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Conference

ConferenceIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period15/05/0816/05/08

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