Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation

Bunji Mizuno*, Yuichiro Sasaki, Cheun Guo Jin, Hideki Tamura, Katsumi Okashita, Hendriansyah Sauddin, Hiroyuki Ito, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance.

Original languageEnglish
Title of host publication13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005
Pages45-51
Number of pages7
DOIs
StatePublished - 2005
Event13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005 - Santa Barbara, CA, United States
Duration: 4 Oct 20057 Oct 2005

Publication series

Name13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Conference

Conference13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005
CountryUnited States
CitySanta Barbara, CA
Period4/10/057/10/05

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    Mizuno, B., Sasaki, Y., Jin, C. G., Tamura, H., Okashita, K., Sauddin, H., Ito, H., Tsutsui, K., & Iwai, H. (2005). Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation. In 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005 (pp. 45-51). [1613683] (13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005). https://doi.org/10.1109/RTP.2005.1613683