The author's group summarizes and updates the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). PD is a good alternative method for ultra shallow junction formation at the 45nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance.
|Number of pages||10|
|State||Published - 2005|
|Event||207th ECS Meeting - Quebec, Canada|
Duration: 16 May 2005 → 20 May 2005
|Conference||207th ECS Meeting|
|Period||16/05/05 → 20/05/05|