Plasma doping

Bunji Mizuno*, Yuichiro Sasaki, Cheun Guo Jin, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The author's group summarizes and updates the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). PD is a good alternative method for ultra shallow junction formation at the 45nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance.

Original languageEnglish
Pages58-67
Number of pages10
StatePublished - 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period16/05/0520/05/05

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