The author's group updates Plasma Doping with using He Plasma Amorphous (PA) technology and Spectroscopic Ellipsometry (SE). PD is a good alternative method for ultra shallow junction formation at 45mn technology node and beyond. The latest annealing method of Laser Annealing (LA) and Flash Lamp Annealing (FLA) were combined with PD. Conventional spike RTA was also used for adequate junction depth with lower resistance.
|Number of pages||5|
|State||Published - 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 18 Oct 2004 → 21 Oct 2004
|Conference||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||18/10/04 → 21/10/04|