Plasma doping

Bunji Mizuno*, Yuichiro Sasaki, Cheun Guo Jin, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

The author's group updates Plasma Doping with using He Plasma Amorphous (PA) technology and Spectroscopic Ellipsometry (SE). PD is a good alternative method for ultra shallow junction formation at 45mn technology node and beyond. The latest annealing method of Laser Annealing (LA) and Flash Lamp Annealing (FLA) were combined with PD. Conventional spike RTA was also used for adequate junction depth with lower resistance.

Original languageEnglish
Pages423-427
Number of pages5
StatePublished - 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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