Plasma charging induced gate oxide damage during metal etching and ashing

Horng-Chih Lin*, C. H. Perng, Chao-Hsin Chien, S. G. Chiou, T. F. Chang, T. Y. Huang, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

Original languageEnglish
Pages113-116
Number of pages4
StatePublished - 1 Jan 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: 13 May 199614 May 1996

Conference

ConferenceProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period13/05/9614/05/96

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    Lin, H-C., Perng, C. H., Chien, C-H., Chiou, S. G., Chang, T. F., Huang, T. Y., & Chang, C. Y. (1996). Plasma charging induced gate oxide damage during metal etching and ashing. 113-116. Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .