Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.
|Number of pages||4|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA|
Duration: 13 May 1996 → 14 May 1996
|Conference||Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID|
|City||Santa Clara, CA, USA|
|Period||13/05/96 → 14/05/96|