Plasma charging damage on ultrathin gate oxides

Donggun Park*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Capacitor C-V and threshold voltage and subthreshold swing of MOSFET's with gate oxide thickness varying from 2.2 to 7.7 nm are analyzed to study the plasma charging damage by the metal etching process. Surprisingly, the ultrathin gate oxide has better immunity to plasma charging damage than the thicker oxide, thanks to the excellent tolerance of the thin gate oxide to tunneling current. This finding has very positive implications for the prospect of manufacturable scaling of gate oxide to very thin thickness.

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - 1 Jan 1998


  • Charging damage
  • Diode protection
  • Oxide scaling
  • Reliability
  • Thin gate oxide

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