Threshold voltage and subthreshold slope of NMOSFETs are compared for the thin gate oxides with the thickness of 2.2, 3.7, 5.2, and 7.7 nm to study the plasma charging damage during the metal etching and contact etching processes. Anomalously, the ultra-thin gate oxide has superior immunity to the plasma charging damage, thanks to the large tolerance of the thin gate oxide tunneling current. CV characteristics show the same results as the transistor parameters.
|Number of pages||4|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA|
Duration: 13 May 1997 → 14 May 1997
|Conference||Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage|
|City||Monterey, CA, USA|
|Period||13/05/97 → 14/05/97|