Plasma charging damage on ultra-thin gate oxides

Donggun Park*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

22 Scopus citations

Abstract

Threshold voltage and subthreshold slope of NMOSFETs are compared for the thin gate oxides with the thickness of 2.2, 3.7, 5.2, and 7.7 nm to study the plasma charging damage during the metal etching and contact etching processes. Anomalously, the ultra-thin gate oxide has superior immunity to the plasma charging damage, thanks to the large tolerance of the thin gate oxide tunneling current. CV characteristics show the same results as the transistor parameters.

Original languageEnglish
Pages15-18
Number of pages4
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA
Duration: 13 May 199714 May 1997

Conference

ConferenceProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
CityMonterey, CA, USA
Period13/05/9714/05/97

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    Park, D., & Hu, C-M. (1997). Plasma charging damage on ultra-thin gate oxides. 15-18. Paper presented at Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA, USA, . https://doi.org/10.1109/PPID.1997.596670