Plasma charging damage on ultra-thin gate oxides

Donggun Park; Chen-Ming Hu

doi:10.1109/PPID.1997.596670

Plasma charging damage on ultra-thin gate oxides

Donggun Park^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

22 Scopus citations

Abstract

Threshold voltage and subthreshold slope of NMOSFETs are compared for the thin gate oxides with the thickness of 2.2, 3.7, 5.2, and 7.7 nm to study the plasma charging damage during the metal etching and contact etching processes. Anomalously, the ultra-thin gate oxide has superior immunity to the plasma charging damage, thanks to the large tolerance of the thin gate oxide tunneling current. CV characteristics show the same results as the transistor parameters.

Original language	English
Pages	15-18
Number of pages	4
DOIs	https://doi.org/10.1109/PPID.1997.596670
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA Duration: 13 May 1997 → 14 May 1997

Conference

Conference	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
City	Monterey, CA, USA
Period	13/05/97 → 14/05/97

Access to Document

10.1109/PPID.1997.596670

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title = "Plasma charging damage on ultra-thin gate oxides",

abstract = "Threshold voltage and subthreshold slope of NMOSFETs are compared for the thin gate oxides with the thickness of 2.2, 3.7, 5.2, and 7.7 nm to study the plasma charging damage during the metal etching and contact etching processes. Anomalously, the ultra-thin gate oxide has superior immunity to the plasma charging damage, thanks to the large tolerance of the thin gate oxide tunneling current. CV characteristics show the same results as the transistor parameters.",

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AB - Threshold voltage and subthreshold slope of NMOSFETs are compared for the thin gate oxides with the thickness of 2.2, 3.7, 5.2, and 7.7 nm to study the plasma charging damage during the metal etching and contact etching processes. Anomalously, the ultra-thin gate oxide has superior immunity to the plasma charging damage, thanks to the large tolerance of the thin gate oxide tunneling current. CV characteristics show the same results as the transistor parameters.

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