Plasma charging damage during contact hole etch in high-density plasma etcher

Bing-Yue Tsui*, Shyue Shyh Lin, Chia Shone Tsai, Chin C. Hsia

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Plasma process induced damage from high-density plasma dielectric etcher was studied comprehensively. It was observed that PMOS devices were damaged more readily than NMOS devices. Low field gate current is the most sensitive parameter to reflect the permanent damages. Some permanent damages become hidden defects after backend of line processes. These latent damages in the form of gate oxide traps result in poor oxide integrity during Fowler-Nordheim stress or hot carrier stress. The damage shows good correlation with the total exposed contact area. The safe antenna ratio is much lower than that at the conductor etch, although no electron shading effect was observed. Thus, plasma damage during contact or via hole etch in high-density plasma system must be considered carefully.

Original languageEnglish
Pages (from-to)2039-2046
Number of pages8
JournalMicroelectronics Reliability
Volume40
Issue number12
DOIs
StatePublished - 1 Dec 1999

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