Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

Kaiyuan Yao, Sourabh Khandelwal, Firas Sammoura, Atsushi Kazama, Chen-Ming Hu, Liwei Lin

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs' threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications.

Original languageEnglish
Article number7156076
Pages (from-to)902-904
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number9
DOIs
StatePublished - 1 Sep 2015

Keywords

  • GaN HEMT
  • Schottky barrier
  • piezoelectricity

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